Infineon IRLR2905TRPBF
$ 0.575
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRLR2905TRPBF | 54,000 | 2K | 2d | ||||||||
| Newark | IRLR2905TRPBF | 10,005 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRLR2905TRPBF | 13,831 | 1 | |||||||||
| Future Electronics | IRLR2905TRPBF | 20,000 | 2K | Tape & Reel | ||||||||
| Rochester Electronics | IRLR2905TRPBF | 3,733 | 23h |
Inventory History
3 month trend: -1.62%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRLR2905TRPBF.
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.575
$ 3.46
Stock
1,386,702
97,236
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
20 A
42 A
Threshold Voltage
2 V
1 V
Rds On Max
27 mΩ
27 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
69 W
110 W
Input Capacitance
1.7 nF
1.7 nF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Descriptions
Descriptions of Infineon IRLR2905TRPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 42A;D-Pak (TO-252AA);PD 110W
Single N-Channel 55 V 110 W 48 nC Hexfet Power Mosfet Surface Mount -TO-252AA
In a Tube of 75, N-Channel MOSFET, 42 A, 55 V, 3-Pin DPAK Infineon IRLR2905PBF
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:36A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:16V; Package/Case:D-Pak; Power Dissipation, Pd:110W ;RoHS Compliant: Yes
N CHANNEL MOSFET, 55V, 42A, D-PAK; Trans; N CHANNEL MOSFET, 55V, 42A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:55V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; No. of Pins:3
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 42 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 27 / Gate-Source Voltage V = 16 / Fall Time ns = 15 / Rise Time ns = 84 / Turn-OFF Delay Time ns = 26 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 110
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -1.62%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Current Rating42 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.7 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance27 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation69 W
Rds On Max27 mΩ
Resistance27 mΩ
Rise Time84 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)55 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRLR2905TRPBF.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements