Infineon IRLR2905PBF

Name: Infineon IRLR2905PBF
Brand: Infineon
SKU: IRLR2905PBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.027 Ohm; Id 42A; D-pak (TO-252AA); Pd 110W

$ 0.97

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLR2905PBF	0	1	Bulk	1.070	0.970	0.970	0.970	0.970	17h
Farnell	IRLR2905PBF	0	5			1.023*	0.646*	0.484*	0.474*	1d
Win Source	WS-IRLR2905PBF	13,010	95				0.553	0.369	0.369	1h
Worldway Electronics	IRLR2905PBF	19,256	7	Tube		0.155	0.150	0.142	0.142	1d
Esaler Electronic	IRLR2905PBF	3,000			0.434	0.430	0.426	0.422	0.418	42m

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLR2905PBF.

IHS

Datasheet11 pages21 years ago

Datasheet12 pages21 years ago

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-01-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRLR2905PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 42A;D-Pak (TO-252AA);PD 110W

RS (Formerly Allied Electronics)

Single N-Channel 55 V 0.027 Ohm 48 nC HEXFET® Power Mosfet - TO-252AA

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55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET, N, 55V, 36A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:55V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:69W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:42A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; No. of Transistors:1; On State resistance @ Vgs = 10V:27mohm; Package / Case:DPAK; Power Dissipation Pd:69W; Power Dissipation Pd:69W; Pulse Current Idm:160A; SMD Marking:IRLR2905; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

element14 APAC