Infineon IRLR2905TRLPBF
$ 0.59
Obsolete
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Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRLR2905TRLPBF.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-04
Lifecycle StatusObsolete (Last Updated: 6 months ago)
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Descriptions
Descriptions of Infineon IRLR2905TRLPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 42A;D-Pak (TO-252AA);PD 110W
Single N-Channel 55 V 27 mOhm 48 nC HEXFET® Power Mosfet - DPAK
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:42A; On Resistance, Rds(on):27mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)20 A
Current Rating41 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time15 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.7 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance27 mΩ
Package Quantity3000
Power Dissipation69 W
Rds On Max27 mΩ
Rise Time84 ns
Schedule B8541290080
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)55 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRLR2905TRLPBF.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements