Infineon IRLML2030TRPBF

Name: Infineon IRLML2030TRPBF
Brand: Infineon
SKU: IRLML2030TRPBF

MOSFET N-CH 30V 2.7A SOT23 N-Channel 30 V 2.7A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23

$ 0.12

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SKU

Min

Pkg

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USD

17h

Cut Tape

USD

Tape & Reel

USD

0.185

Rochester Electronics

USD

15h

USD

3 month trend: -18.37%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRLML2030TRPBF.

Newark

Datasheet10 pages16 years ago

element14 APAC

Upverter

iiiC

Inventory History

3 month trend:

-18.37%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-11-04

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRLML2030TRPBF provided by its distributors.

MOSFET N-CH 30V 2.7A SOT23 N-Channel 30 V 2.7A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23

Eurochip Technologies LTD

30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

Infineon SCT

MOSFET N-CH 30V 2.7A SOT-23-3 / Trans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R

Win Source

Single N-Channel 30 V 154 mOhm 1 nC HEXFET® Power Mosfet - SOT-23

Future Electronics

MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W

Distrelec

HEXFET POWER MOSFET Small Signal Field-Effect Transistor

ComSIT Distribution GmbH

Pwr Mosfet, N Channel, 30V, 2.7A; |Infineon Technologies IRLML2030TRPBF.

Newark

MOSFET, 30V, 2.7A, 100 MOHM, 1.0 NC QG,SOT-23

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 2.7A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Abacus Technologies

MOSFET, N CH, 30V, 2.7A, SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon