Infineon IRL7833STRLPBF

Name: Infineon IRL7833STRLPBF
Brand: Infineon
SKU: IRL7833STRLPBF

Single N-Channel 30V 3.8 mOhm 32 nC HEXFET® Power Mosfet - D2PAK

$ 5.62

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRL7833STRLPBF	0	8	Bulk		6.390	5.620	5.620	5.620	1h
Farnell	2	IRL7833STRLPBF	0	1	Cut Tape	3.120*	2.434*	1.748*	1.070*	1.070*	12h
Weyland Electronics Group Pte. Ltd.		IRL7833STRLPBF	2,400	1	Tape & Reel	16.527	16.527	16.527	16.527	16.527	14h
Win Source		WS-IRL7833STRLPBF	2,230	1		52.388	34.925	34.925	34.925	34.925	13h
Worldway Electronics		IRL7833STRLPBF	15,451	7	Tape & Reel		0.429	0.416	0.394	0.394	12h

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRL7833STRLPBF.

IHS

Datasheet14 pages22 years ago

Newark

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Alternate Parts

This Part

Alternate Parts

InfineonIRL7833STRLPBF

InfineonIRL7833SPBF

Price @ 1000

$ 5.62

$ 2.46

Stock

128,786

93,051

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

1.4 V

Rds On Max

3.8 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

140 W

Input Capacitance

4.17 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-07-25

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

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Descriptions

Descriptions of Infineon IRL7833STRLPBF provided by its distributors.

Single N-Channel 30V 3.8 mOhm 32 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Trans MOSFET N-CH 30V 150A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 30V 150A D2PAK

Win Source

30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level

Infineon

Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:150A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.3V; Power Dissipation:140W; No. of Pins:3Pins RoHS Compliant: Yes

Newark