Infineon IRL6372PBF

Name: Infineon IRL6372PBF
Brand: Infineon
SKU: IRL6372PBF

Dual N-Channel 30 V 2.0 W 11 nC Hexfet Power Mosfet Surface Mount - SOIC-8

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRL6372PBF	0	3800	Bulk					0.360	2h
Farnell	IRL6372PBF	0	1		1.154*	1.154*	0.673*	0.369*	0.369*	12h
Component Stockers USA	IRL6372PBF	564			99.990	99.990	99.990	99.990	99.990	>1wk
Win Source	WS-IRL6372PBF	3,750	60				0.873	0.582	0.582	13h
Worldway Electronics	IRL6372PBF	7,101	7	Tube		0.129	0.125	0.118	0.118	12h

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRL6372PBF.

IHS

Datasheet8 pages15 years ago

Datasheet9 pages15 years ago

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRL6372PBF

InfineonIRL6372TRPBF

Price @ 1000

$ 0.304

Stock

294,065

449,975

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

8.1 A

Threshold Voltage

1.1 V

Rds On Max

17.9 mΩ

Gate to Source Voltage (Vgs)

12 V

Power Dissipation

2 W

Input Capacitance

1.02 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-01-17

Lifecycle StatusObsolete (Last Updated: 3 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

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Descriptions

Descriptions of Infineon IRL6372PBF provided by its distributors.

Dual N-Channel 30 V 2.0 W 11 nC Hexfet Power Mosfet Surface Mount - SOIC-8

Future Electronics

30V Dual N-Channel Low Logic Level HEXFET Power MOSFET in a SO-8 Lead-Free package, SO8, RoHS

Infineon SCT

Trans MOSFET N-CH 30V 8.1A 8-Pin SOIC Tube

Avnet

MOSFET Dual N-Ch 30V 8.1A HEXFET SOIC8

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 8.1A I(D), 30V, 0.0179ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

Benefits: RoHS Compliant; Compatible with Existing Surface Mount Techniques; Qualified MSL1; Dual N-Channel MOSFET | Target Applications: Battery Protection

Infineon

MOSFET,NN CH,W DIODE,30V,8.1A,SO8; Transistor Polarity:Dual N Channel; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:8.1A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.014ohm; Power Dissipation Pd:2W

Farnell