Infineon IRL6342TRPBF

Name: Infineon IRL6342TRPBF
Brand: Infineon
SKU: IRL6342TRPBF

Single N-Channel 30 V 14.6 mOhm 11 nC HEXFET® Power Mosfet - SOIC-8

$ 0.206

Obsolete

Datasheet

Manufacturer Page

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Distributor

SKU

Min

Pkg

Bulk Pricing

USD

USD

600

USD

Weyland Electronics Group Pte. Ltd.

IRL6342TRPBF

4,743

Tape & Reel

USD

0.150

Inventory History

3 month trend: -99.51%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRL6342TRPBF.

Newark

Datasheet9 pages15 years ago

Datasheet8 pages15 years ago

Inventory History

3 month trend:

-99.51%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2011-01-03

Lifecycle StatusObsolete (Last Updated: 6 months ago)

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Descriptions

Descriptions of Infineon IRL6342TRPBF provided by its distributors.

Single N-Channel 30 V 14.6 mOhm 11 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

MOSFET N-CH 30V 9.9A 8SO N-Channel 30 V 9.9A (Ta) 2.5W (Ta) Surface Mount 8-SO

Eurochip Technologies LTD

Trans MOSFET N-CH 30V 9.9A 8-Pin SOIC T/R

Avnet

Power Field-Effect Transistor, 9.9A I(D), 30V, 0.0146ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET, N-CH, 30V, 9.9A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Farnell

Mosfet, N-Ch, 30V, 9.9A, Soic; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.9A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.1V Rohs Compliant: Yes |Infineon Technologies IRL6342TRPBF

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon