Infineon IRL3803PBF

Name: Infineon IRL3803PBF
Brand: Infineon
SKU: IRL3803PBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 0.006 Ohm; Id 140A; TO-220AB; Pd 200W; Vgs +/-16V

$ 2.68

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRL3803PBF	0	1	Bulk	3.040	2.680	2.680	2.680	2.680	17h
Farnell		IRL3803PBF	0	1		2.577*	1.691*	1.678*	1.651*	1.651*	4h
Microchip USA		IRL3803	396	600	Tube				2.261	2.261	7d
Win Source	2	WS-IRL3803PBF	8,710	90				0.672	0.448	0.448	5h
Worldway Electronics	2	IRL3803PBF	16,049	7	Tube		0.884	0.868	0.834	0.834	43m

CAD Models

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Datasheets & Documents

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Farnell

Datasheet9 pages5 years ago

IHS

Factory Futures

RS (Formerly Allied Electronics)

iiiC

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-01-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2012-12-28

LTD Date2013-06-28

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Descriptions

Descriptions of Infineon IRL3803PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.006Ohm;ID 140A;TO-220AB;PD 200W;VGS +/-16V

RS (Formerly Allied Electronics)

Single N-Channel 30 V 0.006 Ohm 140 nC HEXFET® Power Mosfet - TO-220-3

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30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

IR MOSFET Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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MOSFET, N, 30V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:140A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:480A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V

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The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon