Infineon IRL3705NPBF

Name: Infineon IRL3705NPBF
Brand: Infineon
SKU: IRL3705NPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 0.01 Ohm; Id 89A; TO-220AB; Pd 170W; Vgs +/-16V

$ 0.917

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark		IRL3705NPBF	599	1		2.620	1.690	1.160	0.895	0.895
Future Electronics	2	IRL3705NPBF	100	50	Tube			1.280	1.240	1.210
Arrow Electronics	3	IRL3705NPBF	483	1		2.456	1.606	1.124	1.124	1.124
DigiKey		IRL3705NPBF-ND	3,227	1	Tube	2.800	1.806	1.239	0.918	0.760
RS (Formerly Allied Electronics)		IRL3705NPBF	0	1	Bulk	2.540	2.240	2.240	2.240	2.240	15h

Inventory History

3 month trend: -27.42%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRL3705NPBF.

IHS

Datasheet9 pages7 years ago

Datasheet9 pages28 years ago

Datasheet9 pages22 years ago

Newark

RS (Formerly Allied Electronics)

Farnell

iiiC

Inventory History

3 month trend:

-27.42%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRL3705NPBF

InfineonAUIRL3705N

Price @ 1000

$ 0.917

$ 2.415

Stock

468,898

214,585

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

89 A

Threshold Voltage

2 V

1 V

Rds On Max

10 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

170 W

Input Capacitance

3.6 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-02-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2012-08-25

LTD Date2013-02-25

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Descriptions

Descriptions of Infineon IRL3705NPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.01Ohm;ID 89A;TO-220AB;PD 170W;VGS +/-16V

RS (Formerly Allied Electronics)

Single N-Channel 55 V 0.012 Ohm 98 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Infineon Technologies N channel HEXFET power MOSFET, 55 V, 89 A, TO-220, IRL3705NPBF

Burklin Elektronik

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 89A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:89A; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon