Infineon IRG4BC10SDPBF

Name: Infineon IRG4BC10SDPBF
Brand: Infineon
SKU: IRG4BC10SDPBF

Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220AB

$ 1.89

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRG4BC10SDPBF	0	350	Bulk				1.890	1.890	12h
Win Source	WS-IRG4BC10SDPBF	1,150	35				1.507	1.224	1.224	1d
Worldway Electronics	IRG4BC10SDPBF	18,579	7	Tube		0.648	0.628	0.595	0.595	23h
Anlinkda	IRG4BC10SDPBF	29,713			1.150	1.030	0.886	0.865	0.824	5h
RC Electronics	IRG4BC10SDPBF	26,687	1		0.830	0.760	0.700	0.660	0.640	2d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRG4BC10SDPBF.

IHS

Datasheet10 pages18 years ago

RS (Formerly Allied Electronics)

Newark

DigiKey

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2012-11-04

LTD Date2013-05-04

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Descriptions

Descriptions of Infineon IRG4BC10SDPBF provided by its distributors.

Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220AB

Verical

600V DC-1 kHz (Standard) Copack IGBT in a TO-220AB package

RS (Formerly Allied Electronics)

STANDARD SPEED COPACK INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB

ComSIT Distribution GmbH

IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.58 V Current release time: 720 ns Power dissipation: 38 W

Distrelec

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:14A; Collector Emitter Saturation Voltage, Vce(sat):1.7V; Power Dissipation, Pd:38W; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

IGBT, 600V, 14A, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:14A; Voltage, Vce Sat Max:1.7V; Power Dissipation:38W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:18A; No. of Pins:3; Power, Pd:38W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:1080ns; Time, Rise:32ns; Transistors, No. of:1

Farnell