Infineon IRFSL4010PBF

Name: Infineon IRFSL4010PBF
Brand: Infineon
SKU: IRFSL4010PBF

Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET® Power Mosfet - TO-262-3

$ 4.437

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
Arrow Electronics	IRFSL4010PBF	1,400	1K				4.437	4.437
Rochester Electronics	IRFSL4010PBF	47,000				1.660	1.490	1.400	1d
RS (Formerly Allied Electronics)	IRFSL4010PBF	0	2	Bulk	5.420	5.180	5.180	5.180	6h
Farnell	IRFSL4010PBF	0	1K				1.718*	1.718*	17h
Microchip USA	IRFSL4010PBF	1,131	50	Tube		29.380	29.380	29.380	9h

Inventory History

3 month trend: Restocked

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFSL4010PBF.

Newark

Datasheet10 pages14 years ago

Farnell

Factory Futures

Inventory History

3 month trend:

Restocked

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-10-06

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFSL4010PBF provided by its distributors.

Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET® Power Mosfet - TO-262-3

Future Electronics

High Efficiency Synchronous Rectification in SMPS | MOSFET N-CH 100V 180A TO-262

Win Source

Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

IHS

Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; On Resistance Rds(On):0.0039Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Msl:- Rohs Compliant: Yes

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 180 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 3.9 / Gate-Source Voltage V = 20 / Fall Time ns = 77 / Rise Time ns = 86 / Turn-OFF Delay Time ns = 100 / Turn-ON Delay Time ns = 21 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-262 / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 375

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