onsemi FDI045N10A-F102
$ 2.13
Production
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-07-26
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 weeks ago)
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Descriptions
Descriptions of onsemi FDI045N10A-F102 provided by its distributors.
N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ, TO-262 3L (I2PAK), 1000-TUBE
Power MOSFET, N Channel, 100 V, 164 A, 0.0038 ohm, I2PAK, Through Hole
Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
263W(Tc) 20V 4V@ 250µA 74nC@ 10 V 1individualNChannel 100V 4.5mΩ@ 100A,10V 120A 5.27nF@50V I2PAK，TO-262 Through hole mounting 10.29mm*4.83mm*7.88mm
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.084 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vds)100 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.27 nF
Max Operating Temperature175 °C
Max Power Dissipation263 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation263 W
Rds On Max4.5 mΩ
Rise Time26 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time23 ns
Dimensions
Height9.65 mm
Length10.29 mm
Width4.83 mm
Compliance
Environmental Classification
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance Statements