Infineon IRFS38N20DTRLP
$ 1.59
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Inventory History
3 month trend: +18.79%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-05-17
Lifecycle StatusProduction (Last Updated: 2 months ago)
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InfineonIRFS31N20DPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;D2Pak;PD 200W;VGS +/-30V
InfineonIRFS52N15DTRRP
MOSFET N-CH 150V 51A D2PAK "N-Channel 150 V 51A (Tc) 3.8W (Ta), 230W (Tc) Surface Mount D2PAK"
Descriptions
Descriptions of Infineon IRFS38N20DTRLP provided by its distributors.
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.054Ohm;ID 43A;D2Pak;PD 300W;VGS +/-30V
MOSFET N-CH 200V 43A D2PAK "N-Channel 200 V 43A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount D2PAK"
Single N-Channel 200 V 0.054 Ohm 91 nC HEXFET® Power Mosfet - D2PAK
Power MOSFET, N Channel, 200 V, 43 A, 0.054 ohm, TO-263 (D2PAK), Surface Mount
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, 200V, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:44A; Resistance, Rds On:0.054ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:D2-PAK; ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +18.79%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)43 A
Current Rating44 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance54 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time47 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.9 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance54 mΩ
Package Quantity800
PackagingCut Tape
Power Dissipation3.8 W
Rds On Max54 mΩ
Resistance54 mΩ
Rise Time95 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage5 V
Turn-Off Delay Time29 ns
Turn-On Delay Time16 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance Statements