Infineon IRFS3806TRLPBF

Name: Infineon IRFS3806TRLPBF
Brand: Infineon
SKU: IRFS3806TRLPBF

Single N-Channel 60V 15.8 mOhm 22 nC HEXFET® Power Mosfet - D2PAK

$ 0.621

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark		IRFS3806TRLPBF	2,200	1	Cut Tape	1.990	1.350	0.981	0.749	0.749
Arrow Electronics	3	IRFS3806TRLPBF	1,398	1		1.099	0.771	0.594	0.497	0.497
DigiKey	3	IRFS3806TRLPBFCT-ND	8,522	1	Cut Tape	2.060	1.313	0.885	0.885	0.885
RS (Formerly Allied Electronics)		IRFS3806TRLPBF	0	10	Bulk		1.440	1.270	1.270	1.270	4h
Avnet		IRFS3806TRLPBF	0	3200						0.436	6d

Inventory History

3 month trend: +138%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFS3806TRLPBF.

IHS

Datasheet12 pages18 years ago

Newark

Inventory History

3 month trend:

+138%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFS3806TRLPBF

InfineonIRFS3806PBF

Price @ 1000

$ 0.621

$ 1.4

Stock

415,705

627,540

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

43 A

Threshold Voltage

4 V

Rds On Max

15.8 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

71 W

Input Capacitance

1.15 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-02-29

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFS3806TRLPBF provided by its distributors.

Single N-Channel 60V 15.8 mOhm 22 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Power MOSFET, N Channel, 60 V, 43 A, 0.0126 ohm, TO-263 (D2PAK), Surface Mount

Avnet

60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 60V 43A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N-CH, 60V, 43A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 43A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0126ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 71W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell