Infineon IRFS3306TRLPBF

Name: Infineon IRFS3306TRLPBF
Brand: Infineon
SKU: IRFS3306TRLPBF

Power MOSFET, N Channel, 60 V, 120 A, 0.0042 ohm, TO-263 (D2PAK), Surface Mount

$ 1.294

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark		IRFS3306TRLPBF	791	1	Cut Tape	3.870	2.660	1.960	1.960	1.960
Arrow Electronics	3	IRFS3306TRLPBF	1,594	1		3.291	2.256	1.298	1.294	1.294
Rutronik		TMOSP12395	7,200	800					1.110	0.888	7h
Rochester Electronics		IRFS3306TRLPBF	4,013					1.530	1.270	1.130	23h
DigiKey	3	IRFS3306TRLPBFCT-ND	7,718	1	Cut Tape	3.750	2.446	1.706	1.706	1.706

Inventory History

3 month trend: +12.98%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFS3306TRLPBF.

Newark

Datasheet13 pages12 years ago

element14 APAC

Farnell

Inventory History

3 month trend:

+12.98%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFS3306TRLPBF

InfineonAUIRFS3306TRL

Price @ 1000

$ 1.294

$ 1.65

Stock

402,039

128,167

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

120 A

Threshold Voltage

4 V

Rds On Max

4.2 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

230 W

Input Capacitance

4.52 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-04-27

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFS3306TRLPBF provided by its distributors.

Power MOSFET, N Channel, 60 V, 120 A, 0.0042 ohm, TO-263 (D2PAK), Surface Mount

EBV Elektronik

60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Single N-Channel 60V 4.2 mOhm 85 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Trans MOSFET N-CH Si 60V 160A 3-Pin(2+Tab) D2PAK Reel

Win Source

Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

MOSFET, N-CH, 60V, 120A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 230W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell