Infineon IRFS3004TRL7PP

Name: Infineon IRFS3004TRL7PP
Brand: Infineon
SKU: IRFS3004TRL7PP

Single N-Channel 40V 1.25 mOhm 160 nC HEXFET® Power Mosfet - D2PAK

$ 1.767

NRND

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
DigiKey	3	IRFS3004TRL7PPCT-ND	3,419	1	Cut Tape	4.830	3.188	2.258	2.258	2.258
Newark		IRFS3004TRL7PP	269	1	Cut Tape	4.480	3.150	2.250	2.210	1.880
Future Electronics	2	IRFS3004TRL7PP	30,400	800	Tape & Reel				1.680	1.640
Arrow Electronics	4	IRFS3004TRL7PP	2,398	1		3.983	2.905	2.137	1.787	1.619
Rutronik		TMOS1785	800	800					1.920	1.540	12h

Inventory History

3 month trend: -14.37%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFS3004TRL7PP.

IHS

Datasheet9 pages16 years ago

Newark

Inventory History

3 month trend:

-14.37%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFS3004TRL7PP

InfineonIRFS3004-7PPBF

Price @ 1000

$ 1.767

$ 5.06

Stock

1,050,577

185,368

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

40 V

Continuous Drain Current (ID)

240 A

Threshold Voltage

4 V

Rds On Max

1.25 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

380 W

Input Capacitance

9.13 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-10-28

Lifecycle StatusNRND (Last Updated: 3 months ago)

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Descriptions

Descriptions of Infineon IRFS3004TRL7PP provided by its distributors.

Single N-Channel 40V 1.25 mOhm 160 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

40V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS

Infineon SCT

Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Semicontronic

Trans MOSFET N-CH 40V 400A 7-Pin(6+Tab) D2PAK T/R

Verical

Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive

Infineon

MOSFET, N-CH, 100V, 240A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 240A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 900µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 380W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell