Infineon IRFR7440TRPBF

MOSFET N-CH 40V 90A DPAK N-Channel 40 V 90A (Tc) 140W (Tc) Surface Mount PG-TO252-3

40V Single N-Channel HEXFET Power MOSFET in a Lead Free D-Pak package, DPAK-3, RoHS

MOSFET N CH 40V 90A DPAK / Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) DPAK T/R

Single N-Channel 40 V 2.4 mOhm 89 nC HEXFET® Power Mosfet - TO-252AA

Mosfet Transistor, N Channel, 90 A, 40 V, 0.0019 Ohm, 10 V, 3 V Rohs Compliant: Yes |Infineon Technologies IRFR7440TRPBF

Power Field-Effect Transistor, 90A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

MOSFET, N-CH, 40V, 90A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:140W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 180 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 1.9 / Gate-Source Voltage V = 20 / Fall Time ns = 34 / Rise Time ns = 39 / Turn-OFF Delay Time ns = 51 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 140