Infineon IRFR7440PBF

Name: Infineon IRFR7440PBF
Brand: Infineon
SKU: IRFR7440PBF

40V Single N-Channel HEXFET Power MOSFET in a Lead Free D-Pak package, DPAK-3, RoHS

$ 1.39

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFR7440PBF	0	450	Bulk				1.390	1.390	20h
Farnell	IRFR7440PBF	0	1		1.641*	1.641*	1.150*	0.829*	0.829*	7h
Win Source	WS-IRFR7440PBF	98,640	225					0.203	0.174	8h
Worldway Electronics	IRFR7440PBF	18,558	7	Tube		0.371	0.364	0.350	0.343	1d
Fly-Wing Technology	IRFR7440PBF	194,838			0.470	0.386	0.374	0.350	0.350	2d

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR7440PBF.

IHS

Datasheet13 pages2 years ago

Datasheet12 pages11 years ago

Future Electronics

TME

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRFR7440PBF

InfineonIRFR7440TRPBF

Price @ 1000

$ 1.39

$ 0.649

Stock

313,704

1,373,483

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

40 V

Continuous Drain Current (ID)

90 A

Threshold Voltage

3 V

Rds On Max

2.4 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

140 W

Input Capacitance

4.61 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-10-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

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Descriptions

Descriptions of Infineon IRFR7440PBF provided by its distributors.

40V Single N-Channel HEXFET Power MOSFET in a Lead Free D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 90A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET, N-CH, 40V, 90A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:140W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C

Farnell

Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

Infineon