Infineon IRFR3709ZTRLPBF
Infineon N-Ch Enhancement MOSFET + Diode HEXFET, Vds=30V 86A DPAK (TO-252) SMD 3-Pin
$ 0.507
Obsolete
Price and Stock
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Distributor
SKU
Min
Pkg
Bulk Pricing
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRFR3709ZTRLPBF.
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-03
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
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Descriptions
Descriptions of Infineon IRFR3709ZTRLPBF provided by its distributors.
Infineon N-Ch Enhancement MOSFET + Diode HEXFET, Vds=30V 86A DPAK (TO-252) SMD 3-Pin
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
Mosfet, N-Ch, 40V, 86A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:86A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0052Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Rohs Compliant: Yes |Infineon Technologies IRFR3709ZTRLPBF
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating86 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time3.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.33 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance6.5 mΩ
Package Quantity3000
Power Dissipation79 W
Rds On Max6.5 mΩ
Rise Time12 ns
Schedule B8541290080
Turn-Off Delay Time15 ns
Turn-On Delay Time12 ns
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRFR3709ZTRLPBF.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements