Infineon IRFR13N20DPBF

Name: Infineon IRFR13N20DPBF
Brand: Infineon
SKU: IRFR13N20DPBF

Single N-Channel 200 V 0.235 Ohm 25 nC HEXFET® Power Mosfet - TO-252AA

$ 1.05

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFR13N20DPBF	0	1	Bulk	1.200	1.050	1.050	1.050	1.050	18h
Farnell	IRFR13N20DPBF	0	1		1.615*	1.277*	0.920*	0.642*	0.628*	4h
Win Source	WS-IRFR13N20DPBF	1,320	60				0.873	0.582	0.582	5h
Worldway Electronics	IRFR13N20DPBF	17,720	7	Tube		0.461	0.453	0.435	0.426	1d
GreenTree Electronics	IRFR13N20DPBF	17,100								1d

CAD Models

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Datasheets & Documents

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IHS

Datasheet11 pages21 years ago

Datasheet12 pages21 years ago

Newark

iiiC

DigiKey

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-06-07

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRFR13N20DPBF provided by its distributors.

Single N-Channel 200 V 0.235 Ohm 25 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

MOSFET, N, 200V, 14A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:200V; On Resistance Rds(on):235mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:13A; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:52A; SMD Marking:IRFR13N20D; Termination Type:SMD; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V

element14 APAC

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Infineon