Infineon IRFI3205PBF

Name: Infineon IRFI3205PBF
Brand: Infineon
SKU: IRFI3205PBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.008Ohm; ID 64A; TO-220 Full-Pak; PD 63W; -55de

$ 1.298

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Newark		IRFI3205PBF	2,271	1		3.530	1.820	1.700	1.640	1.640
Future Electronics	2	IRFI3205PBF	26,894	50	Tube			1.250	1.220	1.180
Arrow Electronics		IRFI3205PBF	1,048	1		1.534	1.534	1.390	1.205	1.205
Rochester Electronics		IRFI3205PBF	6,522					1.560	1.290	1.150	9h
DigiKey		IRFI3205PBF-ND	5,994	1	Tube	3.790	3.790	1.729	1.307	1.150

Inventory History

3 month trend: -16.96%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFI3205PBF.

Newark

Datasheet9 pages9 years ago

Datasheet8 pages16 years ago

Datasheet8 pages28 years ago

IHS

Factory Futures

RS (Formerly Allied Electronics)

iiiC

Inventory History

3 month trend:

-16.96%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-08-16

Lifecycle StatusObsolete (Last Updated: 2 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IRFI3205PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 64A;TO-220 Full-Pak;PD 63W;-55de

RS (Formerly Allied Electronics)

Single N-Channel 55 V 0.008 Ohm 170 nC HEXFET® Power Mosfet - TO-220-3FP

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Trans MOSFET N-CH 55V 64A 3-Pin(3+Tab) TO-220 Full-Pack

Avnet

Power Field-Effect Transistor, 64A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, 55V, 56A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:55V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:63W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:64A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2kV; Junction to Case Thermal Resistance A:2.4°C/W; Package / Case:TO-220FP; Power Dissipation Pd:63W; Power Dissipation Pd:63W; Pulse Current Idm:390A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon