Infineon IRFB3004PBF
$ 1.855
Obsolete
Inventory History
3 month trend: -1.80%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
Related Parts
InfineonIRFB3004GPBF
40V Single N-Channel HEXFET Power MOSFET in a Lead Free and Halogen Free TO-220AB package
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Trans MOSFET N-CH 40V 198A Automotive 3-Pin(3+Tab) TO-220AB Rail
Descriptions
Descriptions of Infineon IRFB3004PBF provided by its distributors.
Single N-Channel 40 V 1.75 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3
Power MOSFET, HEXFET, N Channel, 40 V, 195 A, 0.00175 ohm, TO-220AB, Through Hole
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 40V 340A 3-Pin(3+Tab) TO-220 Full-Pak Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 380 W
HEXFET Power MOSFET Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N CH, 40V 340A TO220AB; Transistor Polarity:N Channel; On State Resistance:1.75mohm; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; Base Number:3004; Case Style:TO-220AB; Cont Current Id:195A; Max Voltage Vgs th:4V; Min Voltage Vgs th:2V; Power Dissipation Pd:380W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Typ Voltage Vds:40V; Typ Voltage Vgs th:4V; Voltage Vgs Rds on Measurement:10V; Driver IC Case Style:TO-220AB
The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -1.80%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.75 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time130 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation380 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.75 mΩ
Package Quantity1000
Power Dissipation380 W
Rds On Max1.75 mΩ
Resistance1.75 MΩ
Rise Time220 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time90 ns
Turn-On Delay Time23 ns
Dimensions
Height20.56 mm
Length10.668 mm
Width4.826 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements