Infineon IRLB3034PBF

Name: Infineon IRLB3034PBF
Brand: Infineon
SKU: IRLB3034PBF

Single N-Channel 40 V 1.7 mOhm 108 nC HEXFET® Power Mosfet - TO-220-3

$ 1.53

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRLB3034PBF	25,516					1.710	1.530	1.440	15h
Arrow Electronics		IRLB3034PBF	1,445	1		2.339	1.888	1.571	1.425	1.425
RS (Formerly Allied Electronics)		IRLB3034PBF	0	1	Bulk	5.530	4.870	4.870	4.870	4.870	5h
Farnell		IRLB3034PBF	0	1		3.686*	3.363*	2.085*	1.883*	1.883*	1h
Weyland Electronics Group Pte. Ltd.		IRLB3034PBF	17,989	1	Tape & Reel	0.556	0.556	0.556	0.556	0.556	1d

Inventory History

3 month trend: -0.04%

CAD Models

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Alternate Parts

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Datasheets & Documents

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Farnell

Datasheet9 pages17 years ago

IHS

Inventory History

3 month trend:

-0.04%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-01-14

Lifecycle StatusObsolete (Last Updated: 5 months ago)

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Descriptions

Descriptions of Infineon IRLB3034PBF provided by its distributors.

Single N-Channel 40 V 1.7 mOhm 108 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 40V 343A 3-Pin(3+Tab) TO-220AB

Avnet

MOSFET, 40V, 343A, 1.7 MOHM, 108 NC QG,TO220

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N-CH 40V 195A TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:195A; Package / Case:TO-220AB; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:40V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon