Infineon IRF9530NPBF

Name: Infineon IRF9530NPBF
Brand: Infineon
SKU: IRF9530NPBF

Mosfet, Power; P-ch; Vdss -100V; Rds(on) 0.2 Ohm; Id -14A; TO-220AB; Pd 79W; Vgs +/-20V

$ 0.379

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet	2	IRF9530NPBF	2,000	1		0.921	0.641	0.379	0.379	0.379	2d
Newark	2	IRF9530NPBF.	2,000	1		1.280	0.698	0.624	0.412	0.404
Future Electronics	2	IRF9530NPBF	5,269	50	Tube			0.395	0.375	0.350
Arrow Electronics	3	IRF9530NPBF	44,868	1		1.434	0.410	0.406	0.397	0.364
Rutronik		TMOSP12071	550	50				0.430	0.344	0.344	13h

Inventory History

3 month trend: +23.15%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF9530NPBF.

Newark

Datasheet9 pages22 years ago

IHS

RS (Formerly Allied Electronics)

Jameco

iiiC

Inventory History

3 month trend:

+23.15%

CAD Models

Download Infineon IRF9530NPBF symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download
EE Concierge	SymbolFootprint
SnapEDA	Footprint	3D	Download
Ultra Librarian	SymbolFootprint		Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Lifecycle StatusProduction (Last Updated: 4 months ago)

Related Parts

VishayIRF530PBF

Single N-Channel 100 V 0.16 Ohms Flange Mount Power Mosfet - TO-220-3

Details

InfineonIRL530NPBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.1Ohm;ID 17A;TO-220AB;PD 79W;VGS +/-16V

Details

InfineonIRF530NPBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;TO-220AB;PD 70W;gFS 12S

Details

onsemiFQP13N10L

N-Channel Power MOSFET, Logic Level, QFET®, 100 V, 12.8 A, 180 mΩ, TO-220

Details

VishayIRL530PBF

Single N-Channel 100 V 0.16 Ohms Flange Mount Power Mosfet - TO-220-3

Details

onsemiRFP12N10L

Transistor RFP12N10L MOSFET N-Channel 100 Volt 12 Amp TO-220

Details

Descriptions

Descriptions of Infineon IRF9530NPBF provided by its distributors.

MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;TO-220AB;PD 79W;VGS +/-20V

RS (Formerly Allied Electronics)

Infineon Technologies P-channel HEXFET power MOSFET, -100 V, -14 A, TO-220, IRF9530NPBF

Burklin Elektronik

Single P-Channel 100 V 0.2 Ohm 58 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

In a Tube of 50, P-Channel MOSFET, 14 A, 100 V, 3-Pin TO-220AB Infineon IRF9530NPBF

Jak Electronics

-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Transistor MOSFET P-Ch. -14A/-100V TO220 IRF 9530N PBF

Rapid Electronics

Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220AB, Through Hole

Avnet

Trans MOSFET P-CH 100V 14A 3-Pin(3+Tab) TO-220AB

Verical

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: P Power dissipation: 79 W

Distrelec

HEXFET POWER MOSFET Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

P Channel Mosfet, -100V, 14A, To-220Ab; Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:14A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF9530NPBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, P, -100V, -14A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:75W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-14A; Current Temperature:25°C; Device Marking:IRF9530N; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.9°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Pulse Current Idm:52A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:-100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V

element14 APAC