Descriptions of Infineon IRF530NPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 90Milliohms;ID 17A;TO-220AB;PD 70W;gFS 12S
Transistor: N-MOSFET; unipolar; 100V; 17A; 0.09ohm; 70W; -55+175 deg.C; THT; TO220
Transistor MOSFET N Channel 100 Volt 17 Amp 3-Pin 3+ Tab TO-220AB
Infineon Technologies N channel HEXFET power MOSFET, 100 V, 17 A, TO-220, IRF530NPBF
Single N-Channel 100 V 90 mOhm 37 nC HEXFET® Power Mosfet - TO-220-3
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Transistor MOSFET N-Ch. 17A/100V TO220 IRF 530 N PBF
Power MOSFET, N Channel, 100 V, 17 A, 0.09 ohm, TO-220AB, Through Hole
Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-220AB Tube
70W(Tc) 20V 4V@ 250¦ÌA 37nC@ 10 V 1N 100V 90m¦¸@ 9A,10V 17A 920pF@25V TO-220AB 9.02mm
HEXFET POWER MOSFET Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.