MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.3A; On Resistance, Rds(on):25mohm; Rds(on) Test Voltage, Vgs:4.5V; Leaded Process Compatible:Yes RoHS Compliant: Yes

Newark

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TME

Newark

International Rectifier

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

Infineon Technologies
INF
INFINEO
INFINE
INFIN
INFINION
INFI
INFENION
SIM
INFIEON
INFINEON TECH
INFINEN
IFX
INFIENON
IR/INFINEON
INFINEON/IR
IFT
INFINEON/SIEMENS
LNFINEON
INFN
Infineon Tech ICs
INFINEON TECHNOLOGIE
NFINEON
INFINEON/Infineon
INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

IRF7807VD2TRPBF.

Technical Specifications

Physical

Case/PackageSO

MountSurface Mount

Number of Pins8

Technical

Continuous Drain Current (ID)8.3 A

Current Rating8.3 A

Drain to Source Breakdown Voltage30 V

Drain to Source Resistance25 mΩ

Drain to Source Voltage (Vdss)30 V

Fall Time2.2 ns

Gate to Source Voltage (Vgs)20 V

Max Operating Temperature150 °C

Max Power Dissipation2.5 W

Min Operating Temperature-55 °C

Number of Elements1

PackagingCut Tape

Power Dissipation1.6 W

Rds On Max25 mΩ

Rise Time1.2 ns

Schedule B8541290080

Turn-Off Delay Time1.1 ns

Turn-On Delay Time6.3 ns

Voltage Rating (DC)30 V

Dimensions

Height1.4986 mm

Length4.9784 mm

Width3.9878 mm

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7807VD2TRPBF.

IHS

Datasheet9 pages21 years ago

_legacy Avnet

Compliance

Environmental Classification

Lead FreeLead Free

Radiation HardeningNo

RoHSCompliant

Compliance Statements

Conflict Mineral StatementN/AN/A

Reach Statement6 pages12 years ago

Rohs Statement1 page12 years ago