Infineon IRF7465TRPBF

Single N-Channel 150 V 0.28 Ohm 15 nC HEXFET® Power Mosfet - SOIC-8

MOSFET N-CH 150V 1.9A 8SO N-Channel 150 V 1.9A (Ta) 2.5W (Ta) Surface Mount 8-SO

Trans MOSFET N-CH 150V 1.9A 8-Pin SOIC T/R

150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Power Field-Effect Transistor, 1.9A I(D), 150V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:150V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:30V; Power Dissipation Pd:2.5W

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.9 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 280 / Gate-Source Voltage V = 30 / Fall Time ns = 9 / Rise Time ns = 1.2 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2.5