Infineon IRF7455PBF

Name: Infineon IRF7455PBF
Brand: Infineon
SKU: IRF7455PBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 0.06 Ohm; Id 15A; SO-8; Pd 2.5W; Vgs +/-12V; Gfs 4

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF7455PBF	0	3800	Bulk					1.290	1d
Farnell	2	IRF7455PBF	0	1	Tube	47.050*	47.050*	47.050*	47.050*	47.050*	19h
Sensible Micro		IRF7455PBF	524					2.835	2.625	2.625	5d
Win Source		WS-IRF7455PBF	5,580	12				3.246	2.911	2.911	8h
Worldway Electronics		IRF7455PBF	14,503	7	Tube		0.347	0.336	0.318	0.318	2d

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7455PBF.

IHS

Datasheet9 pages21 years ago

Datasheet8 pages21 years ago

Newark

TME

RS (Formerly Allied Electronics)

Jameco

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-01-21

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF7455PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.06Ohm;ID 15A;SO-8;PD 2.5W;VGS +/-12V;gFS 4

RS (Formerly Allied Electronics)

Transistor: N-MOSFET; unipolar; 30V; 15A; 0.0075ohm; 2.5W; -55+150 deg.C; SMD; SO8

Maritex

Single N-Channel 30 V 0.0055 Ohm 37 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Power Field-Effect Transistor, 15A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:15A; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Junction Temperature Tj Min:-55°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:120A; SMD Marking:F7544; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

element14 APAC