Infineon IRF8113PBF

Name: Infineon IRF8113PBF
Brand: Infineon
SKU: IRF8113PBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 4.7MILLIOHMS; Id 17.2A; SO-8; Pd 2.5W; Vgs +/-2

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF8113PBF	0	3800	Bulk					1.186	1d
Farnell	IRF8113PBF	0	1		1.241*	1.010*	0.718*	0.718*	0.718*	19h
Worldway Electronics	IRF8113PBF	18,568	7	Tube		0.371	0.359	0.340	0.340	2d
SHENGYU ELECTRONICS	IRF8113PBF	9,949	1		0.296	0.290	0.280	0.270	0.260	5d
Run Hong Electronics	IRF8113PBF	5,104			2.255	2.255	2.255	2.255	2.255	20h

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF8113PBF.

IHS

Datasheet10 pages19 years ago

Datasheet11 pages19 years ago

TME

RS (Formerly Allied Electronics)

iiiC

CAD Models

Download Infineon IRF8113PBF symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-06-23

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

Related Parts

InfineonIRF8113TRPBF

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 4.7Milliohms;ID 17.2A;SO-8;PD 2.5W;VGS +/-2

Details

InfineonIRF8736TRPBF

Single N-Channel 30 V 4.8 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8

Details

InfineonIRF8736PBF

IRF8736PBF N-channel MOSFET Transistor,18 A, 30 V, 8-Pin SOIC

Details

onsemiFDS8813NZ

N-Channel 30 V 4.5 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

Details

onsemiFDS8870

Single N-Channel 30 V 2.5 W 112 nC Silicon Surface Mount Mosfet - SOIC-8

Details

onsemiFDS8817NZ

N-Channel 30 V 7 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

Details

Descriptions

Descriptions of Infineon IRF8113PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 4.7Milliohms;ID 17.2A;SO-8;PD 2.5W;VGS +/-2

RS (Formerly Allied Electronics)

HEXFET Power MOSFET Small Signal Field-Effect Transistor

ComSIT Distribution GmbH

Trans MOSFET N-CH 30V 17.2A 8-Pin SOIC

Avnet

Power Field-Effect Transistor, 17.2A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:17.2A; On Resistance, Rds(on):5.6mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:17.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:17.2A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:135A; Row Pitch:6.3mm; SMD Marking:IRF8113PBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.2V; Voltage Vgs Rds on Measurement:10V

element14 APAC