Infineon IRF7425TRPBF
$ 0.516
Obsolete
Price and Stock
Authorized Distributors
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SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -66.07%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-12-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2025-12-31
LTD Date2026-12-31
Related Parts
Descriptions
Descriptions of Infineon IRF7425TRPBF provided by its distributors.
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 8.2 Milliohms;ID -15A;SO-8;PD 2.5W;VGS +/-1
Single P-Channel 20 V 13 mOhm 130 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH Si 20V 15A 8-Pin SOIC T/R / MOSFET P-CH 20V 15A 8-SOIC
Mosfet, P-Ch, 20V, 15A, Soic Rohs Compliant: Yes |Infineon Technologies IRF7425TRPBF
Power MOSFET, P Channel, 20 V, 15 A, 0.0082 ohm, SOIC, Surface Mount
MOSFET P-CH 20V 15A 8SO P-Channel 20 V 15A (Ta) 2.5W (Ta) Surface Mount 8-SO
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Power Field-Effect Transistor, 15A I(D), 20V, 0.0082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
2.5W(Ta) 12V 1.2V@ 250µA 130nC@ 4.5 V 1individualPChannel 20V 8.2mΩ@ 15A,4.5V 15A 7.98nF@15V SOIC-8 SMD mount 1.75mm(height)
MOSFET, P CH, -20V, -15A, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-15A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0082o; Available until stocks are exhausted Alternatives available
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -66.07%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance8.2 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time160 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance7.98 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs12 V
Number of Channels1
Number of Elements1
On-State Resistance8.2 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max8.2 mΩ
Resistance8.2 MΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage-450 mV
Turn-Off Delay Time230 ns
Turn-On Delay Time13 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements