Infineon IRF7341TRPBF
$ 0.353
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: +61.20%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.353
$ 0.902
$ 0.902
Stock
2,242,571
373,297
373,297
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
SOIC
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
5.1 A
5.1 A
5.1 A
Threshold Voltage
1 V
-
-
Rds On Max
50 mΩ
50 mΩ
50 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
2 W
2.4 W
2.4 W
Input Capacitance
740 pF
780 pF
780 pF
Supply Chain
Country of OriginMainland China, USA
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-02-25
Lifecycle StatusProduction (Last Updated: 1 month ago)
Related Parts
InfineonIRF7341PBF
Transistor: 2xN-MOSFET; unipolar; 55V; 4.7A; 0.05ohm; 2W; -55+150 deg.C; SMD; SO8
InfineonIRF7343TRPBF
Dual N/P-Channel 55 V 0.05/0.105 Ohm 24/26 nC HEXFET® Power Mosfet - SOIC-8
Descriptions
Descriptions of Infineon IRF7341TRPBF provided by its distributors.
Transistor MOSFET Array Dual N-CH 55V 4.7A 8-Pin SOIC T/R
Avnet Japan
Dual N-Channel 55V 0.065 Ohm 36 nC HEXFET® Power Mosfet - SOIC-8
MOSFET Array, Dual N Channel, 55 V, 4.7 A, 50 Milliohms, 8 Pins, SOIC
HEXFET POWER MOSFET Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:4.7A; On Resistance Rds(On):0.043Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Product Range:-Rohs Compliant: Yes
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +61.20%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)5.1 A
Current Rating4.7 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationDual
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance740 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
On-State Resistance50 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max50 mΩ
Resistance50 mΩ
Rise Time3.2 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time32 ns
Turn-On Delay Time8.3 ns
Voltage Rating (DC)55 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
Compliance Statements