Infineon IRF7306TRPBF

MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V

Trans MOSFET P-CH Si 30V 3.6A 8-Pin SOIC T/R / MOSFET 2P-CH 30V 3.6A 8-SOIC

Dual P-Channel 30 V 0.16 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8

2W 20V 1V@ 250¦ÌA 25nC@ 10V 2P 30V 100m¦¸@ 1.8A,10V 3.6A 440pF@25V SOIC-8 1.75mm

Transistor: P-Mosfet; Unipolar; -30V; -3.6A; 2W; So8

HEXFET POWER MOSFET Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

MOSFET, DUAL P CH, -30V, -3.6A, SOIC-8; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Channel Type:Dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:-; Continuous Drain Current Id P Channel:3.6A; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes |Infineon IRF7306TRPBF.

Transistor Polarity = P-Channel / Configuration = Dual / Continuous Drain Current (Id) A = -4 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 100 / Gate-Source Voltage V = 20 / Fall Time ns = 18 / Rise Time ns = 17 / Turn-OFF Delay Time ns = 25 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customizedleadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.