Infineon IRF7306PBF

Name: Infineon IRF7306PBF
Brand: Infineon
SKU: IRF7306PBF

Mosfet, Power; Dual P-ch; Vdss -30V; Rds(on) 0.1 Ohm; Id -3.6A; SO-8; Pd 2W; Vgs +/-20V

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7306PBF	0	3800	Bulk					0.980	2h
Farnell	IRF7306PBF	0	5			0.801*	0.457*	0.339*	0.332*	11h
Win Source	WS-IRF7306PBF	15,940	140					0.341	0.327	12h
Worldway Electronics	IRF7306PBF	10,857	7	Tube		0.120	0.116	0.110	0.110	11h
Anlinkda	IRF7306PBF	47,591			1.528	1.369	1.244	1.202	1.181	2d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7306PBF.

IHS

Datasheet9 pages21 years ago

Datasheet10 pages21 years ago

TME

RS (Formerly Allied Electronics)

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-08-08

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRF7306PBF provided by its distributors.

MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V

RS (Formerly Allied Electronics)

Dual P-Channel 30 V 100 mOhm 25 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Transistor MOSFET Array Dual P-CH 30V 3.6A 8-Pin SOIC Tube

Avnet

Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.4W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-3.6A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:1.4W; Power Dissipation Pd:1.4W; Pulse Current Idm:12A; Row Pitch:6.3mm; SMD Marking:F7306; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V

element14 APAC

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customizedleadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.