Infineon IRF7204TRPBF

Name: Infineon IRF7204TRPBF
Brand: Infineon
SKU: IRF7204TRPBF

Mosfet, Power; P-ch; Vdss -20V; Rds(on) 0.06 Ohm; Id -5.3A; SO-8; Pd 2.5W; Vgs +/-12V

$ 0.482

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRF7204TRPBF	1	1		0.502	0.502	0.502	0.502	0.502
RS (Formerly Allied Electronics)		IRF7204TRPBF	0	20	Bulk			0.483	0.462	0.462	6h
Farnell	2	IRF7204TRPBF	0	1	Cut Tape	1.417*	1.159*	0.826*	0.489*	0.489*	17h
Win Source		WS-IRF7204TRPBF	6,360	35				1.177	0.956	0.956	18h
Worldway Electronics		IRF7204TRPBF	18,141	7	Tape & Reel		0.109	0.106	0.100	0.100	17h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7204TRPBF.

IHS

Datasheet9 pages21 years ago

_legacy Avnet

RS (Formerly Allied Electronics)

Jameco

iiiC

Inventory History

3 month trend:

+0.00%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1994-05-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2022-10-15

LTD Date2023-04-15

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Descriptions

Descriptions of Infineon IRF7204TRPBF provided by its distributors.

MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.06Ohm;ID -5.3A;SO-8;PD 2.5W;VGS +/-12V

RS (Formerly Allied Electronics)

Trans MOSFET P-CH Si 20V 5.3A 8-Pin SOIC T/R / MOSFET P-CH 20V 5.3A 8-SOIC

Win Source

Single P-Channel 20 V 0.1 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8

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2.5W(Tc) 12V 2.5V@ 250¦ÌA 25nC@ 10 V 1P 20V 60m¦¸@ 5.3A,10V 5.3A 860pF@10V SOIC-8 1.75mm

Unikeyic (ICkey)

IRF7204TRPBF,MOSFET, P-CHANNEL , -20V, -5.3A, 60 MOHM, 25 NC

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-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-5.3A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:12V; Package/Case:8-SO; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes

Newark

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 5.3 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 12 / Fall Time ns = 68 / Rise Time ns = 26 / Turn-OFF Delay Time ns = 100 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

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