Infineon IRF5210STRLPBF

Name: Infineon IRF5210STRLPBF
Brand: Infineon
SKU: IRF5210STRLPBF

MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 60 Milliohms; ID -38A; D2Pak; PD 170W; -55degc

$ 1.625

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	IRF5210STRLPBF	72,000	800					1.105	1.088	3h
Newark		IRF5210STRLPBF	21,031	1	Cut Tape	4.780	3.180	2.550	2.510	2.110
Rutronik		TMOSP11801	3,200	800					1.710	1.370	8h
RS (Formerly Allied Electronics)		IRF5210STRLPBF	69	1	Bulk	4.290	3.780	3.780	3.780	3.780	13h
Arrow Electronics	2	IRF5210STRLPBF	6,032	1		3.406	2.334	1.829	1.468	1.307

Inventory History

3 month trend: +63.21%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF5210STRLPBF.

Newark

Datasheet11 pages16 years ago

Datasheet10 pages28 years ago

IHS

element14 APAC

iiiC

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

+63.21%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF5210STRLPBF

InfineonAUIRF5210STRL

Price @ 1000

$ 1.625

$ 3.575

Stock

1,011,199

86,026

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

TO-263-3

Drain to Source Voltage (Vdss)

-100 V

Continuous Drain Current (ID)

38 A

Threshold Voltage

-4 V

Rds On Max

60 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

3.1 W

170 W

Input Capacitance

2.78 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-08-14

Lifecycle StatusProduction (Last Updated: 5 months ago)

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Descriptions

Descriptions of Infineon IRF5210STRLPBF provided by its distributors.

MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 60 Milliohms;ID -38A;D2Pak;PD 170W;-55degc

RS (Formerly Allied Electronics)

Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Power MOSFET, P Channel, 100 V, 38 A, 0.06 ohm, TO-263 (D2PAK), Surface Mount

Avnet

-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET P-CH 100V 38A 3-Pin (2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

Infineon

; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-40A; On Resistance, Rds(on):60mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:-4V ;RoHS Compliant: Yes

Newark

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 38 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 60 / Gate-Source Voltage V = 20 / Fall Time ns = 55 / Rise Time ns = 63 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 170

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