Infineon IRF460
$ 32
Obsolete
Price and Stock
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Inventory History
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CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2020-08-03
Related Parts
InfineonJANTX2N6768
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Descriptions
Descriptions of Infineon IRF460 provided by its distributors.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Power Field-Effect Transistor, 21A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package, TO-204AE-2
Infineon SCT
Trans MOSFET N-CH 500V 21A 3-Pin (2+Tab) TO-204AE
IRF460 Seris 500 V 0.27 Ohm 21 A N-Channel Hexfet®Transistor - TO-3
IC CURR SENSE 1 CIRCUIT SOT23-5
MOSFET, N, TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:500V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:1200mJ; Current Iar:21A; Current Id Max:21A; Current Temperature:25°C; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:84A; Repetitive Avalanche Energy Max:30mJ; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Weight:11.5g
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Body MaterialMetal
Case/PackageTO-3
MountThrough Hole
Number of Pins2
Number of Terminals2
Weight11.5 g
Technical
Continuous Drain Current (ID)21 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance310 mΩ
Drain to Source Voltage (Vds)500 V
Dual Supply Voltage500 V
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation300 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance300 mΩ
Power Dissipation300 W
TerminationThrough Hole
Dimensions
Lead Pitch11 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCUnaffected
RoHSNon-Compliant
Compliance Statements