Infineon IRF2807ZSPBF

Name: Infineon IRF2807ZSPBF
Brand: Infineon
SKU: IRF2807ZSPBF

75V Single N-Channel HEXFET Power MOSFET in a D2Pak Package, D2PAK-3, RoHS

$ 2.11

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF2807ZSPBF	0	500	Bulk				2.110	2.110	20h
Farnell	IRF2807ZSPBF	0	1		2.969*	2.969*	2.969*	2.969*	2.969*	1d
Component Stockers USA	IRF2807ZSPBF	552			99.990	99.990	99.990	99.990	99.990	17h
Win Source	WS-IRF2807ZSPBF	20	40				1.029	0.836	0.836	4h
Worldway Electronics	IRF2807ZSPBF	19,959	7	Tube		0.763	0.739	0.700	0.700	3h

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF2807ZSPBF.

IHS

Datasheet13 pages15 years ago

Datasheet12 pages15 years ago

Newark

iiiC

DigiKey

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Alternate Parts

This Part

Alternate Parts

InfineonIRF2807ZSPBF

InfineonIRF2807ZSTRLPBF

Price @ 1000

$ 2.11

$ 1.11

Stock

94,553

258,784

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

4 V

Rds On Max

9.4 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

170 W

Input Capacitance

3.27 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-04-04

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

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Descriptions

Descriptions of Infineon IRF2807ZSPBF provided by its distributors.

75V Single N-Channel HEXFET Power MOSFET in a D2Pak Package, D2PAK-3, RoHS

Infineon SCT

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

Infineon

Trans MOSFET N-CH 75V 89A 3-Pin(2+Tab) D2PAK Tube

Verical

Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N, 75V, 89A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:75V; On Resistance Rds(on):9.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:75A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:9.4mohm; Package / Case:D2-PAK; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:350A; Termination Type:SMD; Voltage Vds:75V; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC