Infineon IRF1405SPBF

Name: Infineon IRF1405SPBF
Brand: Infineon
SKU: IRF1405SPBF

Mosfet, Power; N-ch; Vdss 55V; Rds(on) 4.6MILLIOHMS; Id 131A; D2PAK; Pd 200W; Vgs +/-2

$ 3.43

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF1405SPBF	0	1	Bulk	3.810	3.430	3.430	3.430	3.430	19h
Farnell	IRF1405SPBF	0	1		5.884*	5.884*	2.792*	2.370*	2.370*	1d
Win Source	WS-IRF1405SPBF	3,650	20				2.052	1.721	1.721	4h
Worldway Electronics	IRF1405SPBF	9,227	7	Tube		1.103	1.070	1.013	1.013	2h
Anlinkda	IRF1405SPBF	52,302			0.513	0.459	0.421	0.403	0.392	11h

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF1405SPBF.

Newark

Datasheet11 pages15 years ago

Datasheet12 pages21 years ago

Datasheet11 pages21 years ago

IHS

Factory Futures

RS (Formerly Allied Electronics)

DigiKey

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2001-01-11

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

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Descriptions

Descriptions of Infineon IRF1405SPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.6Milliohms;ID 131A;D2Pak;PD 200W;VGS +/-2

RS (Formerly Allied Electronics)

Single N-Channel 55 V 5.3 mOhm 170 nC HEXFET® Power Mosfet - D2PAK

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55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

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Trans MOSFET N-CH 55V 131A 3-Pin(2+Tab) D2PAK

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Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

N Channel Mosfet, 55V, 131A, D2-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:131A; On Resistance Rds(On):0.0053Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

Newark

MOSFET, N, 55V, 131A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:131A; Resistance, Rds On:0.0053ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Case Style, Alternate:D2-PAK; Current, Idm Pulse:680A; Power Dissipation:200W; Power, Pd:200W; Resistance, Rds on @ Vgs = 10V:0.0053ohm; Thermal Resistance, Junction to Case A:0.75°C/W; Voltage, Vds:55V; Voltage, Vds Max:55V; Voltage, Vgs th Max:4V

Farnell