Infineon IRF1324PBF

Name: Infineon IRF1324PBF
Brand: Infineon
SKU: IRF1324PBF

24V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS

$ 1.368

Obsolete

Datasheet

Manufacturer Page

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor

SKU

Min

Pkg

Bulk Pricing

Rochester Electronics

USD

12h

USD

Tube

USD

3.700

1.680

1.368

RS (Formerly Allied Electronics)

IRF1324PBF

Bulk

USD

Tube

USD

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF1324PBF.

IHS

Datasheet8 pages16 years ago

Newark

element14 APAC

Burklin Elektronik

iiiC

Inventory History

3 month trend:

+108%

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Alternate Parts

This Part

Alternate Parts

InfineonIRF1324PBF

InfineonAUIRF1324

Price @ 1000

$ 1.368

$ 1.47

Stock

350,429

182,518

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

24 V

Continuous Drain Current (ID)

195 A

Threshold Voltage

4 V

2 V

Rds On Max

1.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

300 W

Input Capacitance

7.59 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-11-10

Lifecycle StatusObsolete (Last Updated: 8 months ago)

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Descriptions

Descriptions of Infineon IRF1324PBF provided by its distributors.

24V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS

Infineon SCT

Infineon Technologies N channel HEXFET power MOSFET, 24 V, 195 A, TO-220, IRF1324PBF

Burklin Elektronik

Trans MOSFET N-CH 24V 353A 3-Pin(3+Tab) TO-220AB

Avnet

Power Field-Effect Transistor, 195A I(D), 24V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N-CH 24V 195A TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:24V; On Resistance Rds(on):1.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:340A; Package / Case:TO-220AB; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:24V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon