Infineon IRF1010EZSTRLP
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | IRF1010EZSTRLP | 0 | 1 | Cut Tape | 9h | |||||||
| Microchip USA | IRF1010EZSTRLP | 2,618 | 600 | 6d | ||||||||
| Component Stockers USA | IRF1010EZSTRLP | 321 | >1wk | |||||||||
| Weyland Electronics Group Pte. Ltd. | IRF1010EZSTRLP | 2,400 | 1 | Tape & Reel | 12h | |||||||
| Win Source | WS-IRF1010EZSTRLP | 20 | 35 | 10h |
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRF1010EZSTRLP.
CAD Models
Download Infineon IRF1010EZSTRLP symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
 EE Concierge | SymbolFootprint | ||
 SnapEDA | Footprint | Download |
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Related Parts
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Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
Descriptions
Descriptions of Infineon IRF1010EZSTRLP provided by its distributors.
Single N-Channel 60 V 8.5 mOhm 86 nC HEXFET® Power Mosfet - D2PAK
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 60V 84A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:75A; On Resistance Rds(On):0.0068Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance8.5 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time54 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.81 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance8.5 mΩ
Package Quantity800
Power Dissipation140 W
Rds On Max8.5 mΩ
Resistance8.5 MΩ
Rise Time90 ns
Schedule B8541290080
Turn-Off Delay Time38 ns
Turn-On Delay Time19 ns
Dimensions
Height5.084 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IRF1010EZSTRLP.
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements