Infineon IRF1010ESTRLPBF

Name: Infineon IRF1010ESTRLPBF
Brand: Infineon
SKU: IRF1010ESTRLPBF

Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - D2PAK

$ 1.914

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRF1010ESTRLPBF	104,475					0.925	0.768	0.685	12h
RS (Formerly Allied Electronics)		IRF1010ESTRLPBF	0	800	Bulk				3.060	2.790	4h
Weyland Electronics Group Pte. Ltd.		IRF1010ESTRLPBF	557	1	Tape & Reel	0.751	0.751	0.751	0.751	0.751	1d
Win Source	2	WS-IRF1010ES	7,000	25				1.620	1.358	1.358	13h
Worldway Electronics	2	IRF1010ES	16,182	7			2.029	1.991	1.914	1.876	12h

Inventory History

3 month trend: +373%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF1010ESTRLPBF.

IHS

Datasheet11 pages21 years ago

Datasheet12 pages21 years ago

Newark

Sierra IC

iiiC

DigiKey

Inventory History

3 month trend:

+373%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-11-24

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

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Descriptions

Descriptions of Infineon IRF1010ESTRLPBF provided by its distributors.

Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH Si 60V 84A 3-Pin(2+Tab) D2PAK T/R

Verical

HEXFET Power MOSFET Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET, N-CH, 60V, 84A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.012ohm; ; Available until stocks are exhausted Alternative available

Farnell

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 84 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 53 / Rise Time ns = 78 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 170

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