Infineon IR25606SPBF

600 V half-bridge gate driver IC with shoot through protection, SOIC 8N, RoHS

IR25606 Series 10 - 20 V 350 mA Half Bridge Mosfet IGBT Driver - SOIC-8

Tube IR25606SPBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 200mA 350mA 625mW

MOSFET DRVR 600V 0.35A 2-OUT Hi/Lo Side Half Brdg Non-Inv 8-Pin SOIC N Tube

150ns, 2, 10V, 300ns, 20V, 800mV, 2.9V Non-Inverting IGBT/MOSFET, N-Channel, 50ns Half-Bridge, 200mA, 350mA, SOIC-8 SMD, 4.9mm × 3.9mm × 1.75mm

DRIVER, GATE, HALF BRIDGE, 0.35A, 8SOIC; Device Type:IGBT, MOSFET; Module Configuration:Half Bridge; Peak Output Current:350mA; Supply Voltage Min:10V; Supply Voltage Max:20V; Driver Case Style:SOIC; No. of Pins:8; Input Delay:220ns; Output Delay:200ns; Operating Temperature Min:-40°C; Operating Temperature Max:125°C; MSL:(Not Available); SVHC:No SVHC (20-Jun-2013)

600 V Half Bridge Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. | Summary of Features: Floating channel designed for bootstrap operation; Integrated 600 V half-bridge gate driver; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V and 15 V input logic compatible; Cross-conduction prevention logic; Matched propagation delay for both channels; Outputs in phase with inputs; Logic and power ground +/- 5 V offset; Internal 540ns dead-time; Lower di/dt gate driver for better noise immunity