Infineon IR21834STRPBF

600 V half-bridge gate driver IC with programmable deadtime, SOIC 14N, RoHS

Tape & Reel (TR) IR21834SPBF Half-Bridge 1996 gate driver 40ns -40C~150C TJ 1.9A 2.3A 1W

IR2183 Series 600 V 1.9 A 20 V Supply Dual Output Half Bridge Driver - SOIC-14

MOSFET DRVR 600V 2.3A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 14-Pin SOIC N T/R

MOSFET Driver, High Side and Low Side, 10 V to 20 V Supply, 1.4 A Peak Out, 220 ns Delay, SOIC-14

IGBT/MOSFET Driver, Inverting/Non-Inverting, N-Ch, Half-Bridge 40ns 330ns 20ns 2 Ch 10V 20V 800mV 2.7V 1.9A 2.3A SOIC-14 SMD, Adhesive Mount 8.74mm × 3.99mm × 1.5mm

Drivers IC; Device Type:IGBT/MOSFET; No. of Outputs:2; Output Voltage:620V; Output Current:2.3A; Power Dissipation, Pd:1W; Supply Voltage Min:10V; Supply Voltage Max:20V; Termination Type:SMD; Package/Case:14-SOIC; No. of Pins:14 ;RoHS Compliant: Yes

600 V Half Bridge Driver IC with typical 1.9 A source and 2.3 A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 14 Lead SOIC, 8 Lead SOIC, and 8 Lead PDIP.For the new version with our SOI technology we recommend 2ED21834S06J, providing integrated bootstrap diode, better robustness and higher switching frequency

The IR2183(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.