Infineon IPW65R041CFDFKSA1

MOSFET N-CH 650V 68.5A TO247-3 N-Channel 650 V 68.5A (Tc) 500W (Tc) Through Hole PG-TO247-3-1

Power Field-Effect Transistor, 68.5A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

500KW 20V 4.5V 300nC@ 10V 1individualNChannel 700V 41mΩ@ 10V 68.5A 8.4nF@ 100V TO-247 Through hole mounting 25.57mm(height)

Channel Type:N Channel; Drain Source Voltage Vds:700V; Continuous Drain Current Id:68.5A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:500W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IPW65R041CFDFKSA1.

650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility