STMicroelectronics STP33N60DM2

Name: STMicroelectronics STP33N60DM2
Brand: STMicroelectronics
SKU: STP33N60DM2

N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package

$ 2.03

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Distributor		SKU		Min	Pkg
Future Electronics		STP33N60DM2	1,780	10	Tube		2.530	2.490	2.430	2.360
Newark		STP33N60DM2	14	1		5.100	3.260	3.090	2.840	2.840
TME	2	STP33N60DM2	50	1		3.800	2.700	2.320	2.320	2.320	20h
DigiKey		497-16352-5-ND	1,496	1	Tube	5.210	5.210	2.459	1.896	1.768
Avnet		STP33N60DM2	0	1K					1.790	1.714	5d

Inventory History

3 month trend: -0.46%

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Datasheets & Documents

Download datasheets and manufacturer documentation for STMicroelectronics STP33N60DM2.

Future Electronics

Datasheet20 pages10 years ago

STMicroelectronics

Newark

Inventory History

3 month trend:

-0.46%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-10-20

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of STMicroelectronics STP33N60DM2 provided by its distributors.

N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-220 package

STMicroelectronics

N-Channel 600 V 130 mOhm Flange Mount MDmesh DM2 Power Mosfet -TO-220

Future Electronics

190W(Tc) 25V 5V@ 250¦ÌA 43nC@ 10 V 1N 600V 130m¦¸@ 12A,10V 24A 1.87nF@100V TO-220

Unikeyic (ICkey)

Power Field-Effect Transistor, 24A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

Mosfet, N-Ch, 600V, 24A, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.11Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes |Stmicroelectronics STP33N60DM2

Newark

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Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names: