Infineon IPI90R1K2C3XKSA2

Name: Infineon IPI90R1K2C3XKSA2
Brand: Infineon
SKU: IPI90R1K2C3XKSA2

Transistor Power MOSFET N-CH 900V 5.1A 3-Pin PG-TO262

$ 0.855

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min
Rochester Electronics		IPI90R1K2C3XKSA2	12,038				1.030	0.855	0.762	1h
Farnell	2	IPI90R1K2C3XKSA1	0	1	0.868*	0.719*	0.644*	0.644*	0.644*	1d
Verical	3	IPI90R1K2C3XKSA2	4,000	292				1.069	0.953
Component Stockers USA		IPI90R1K2C3XKSA2	1,653		0.880	0.880	0.820	0.740	0.740	15h
Win Source		WS-IPI90R1K2C3	4,480	25			1.869	1.567	1.567	2h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPI90R1K2C3XKSA2.

IHS

Datasheet10 pages17 years ago

Farnell

Inventory History

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+0.00%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-02-21

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-04-15

LTD Date2024-10-15

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Descriptions

Descriptions of Infineon IPI90R1K2C3XKSA2 provided by its distributors.

Transistor Power MOSFET N-CH 900V 5.1A 3-Pin PG-TO262

Avnet

Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

IHS

MOSFET, N-CH, 900V, 5.1A, 150DEG C, 83W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.94ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:

element14 APAC

MOSFET, N, TO-262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:900V; Current, Id Cont:5.1A; On State Resistance:1.2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-262;;RoHS Compliant: Yes

Newark

900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting

Infineon