Infineon IPG20N04S408ATMA1

40V, Dual N-Ch, 7.6 mΩ max, Automotive MOSFET, dual SS08 (5x6), OptiMOS™-T2, PG-TDSON-8, RoHS

Transistor: N-MOSFET; unipolar; 40V; 20A; 0.007ohm; 65W; -55+175 deg.C; SMD; PG-TDSON8-4; AEC-Q100

MOSFET, AEC-Q101, DUAL N-CH, TDSON-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 65W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS T2 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Summary of Features: Dual N-channel Normal Level - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: Dual Super S08 can replace multiple DPAKs for significant PCB area savings and system level cost reduction.; Bond wire is 200um for up to 20A current; Larger source lead frame connection for wire bonding; Package: PG-TDSON-8-4; Same thermal and electrical performance as a DPAK with the same die size.; Exposed pad provides excellent thermal transfer (varies by die size); Two N-Channel MOSFETs in one package with 2 isolated lead frames | Target Applications: Small loads control switching; Body applications