Infineon IPD068P03L3GATMA1

Name: Infineon IPD068P03L3GATMA1
Brand: Infineon
SKU: IPD068P03L3GATMA1

Power MOSFET, P Channel, 30 V, 70 A, 0.005 ohm, TO-252 (DPAK), Surface Mount

$ 0.483

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Distributor		SKU		Min	Pkg
Newark	2	IPD068P03L3GATMA1	1,147	5	Cut Tape		0.998	0.664	0.664	0.664
Arrow Electronics	2	IPD068P03L3GATMA1	2,459	1		0.348	0.348	0.348	0.348	0.348
Rutronik		TMOS2923	2,500	2500						0.388	8h
Rochester Electronics		IPD068P03L3GATMA1	1,350					0.494	0.410	0.365	1h
DigiKey	3	IPD068P03L3GATMA1CT-ND	9,970	1	Cut Tape	1.640	1.037	0.691	0.494	0.494

Inventory History

3 month trend: -1.66%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPD068P03L3GATMA1.

Newark

Datasheet9 pages11 years ago

_legacy Avnet

element14 APAC

Inventory History

3 month trend:

-1.66%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-05-27

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IPD068P03L3GATMA1 provided by its distributors.

Power MOSFET, P Channel, 30 V, 70 A, 0.005 ohm, TO-252 (DPAK), Surface Mount

EBV Elektronik

Trans MOSFET P-CH 30V 70A Automotive 3-Pin(2+Tab) DPAK T/R

Verical

MOSFET Devices; INFINEON; IPD068P03L3GATMA1; -30 V; 70 A; 100 W; 5 mOhm

Maritex

Power Field-Effect Transistor, 70A I(D), 30V, 0.0068ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

MOSFET, P-CH, -30V, -70A, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -70A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.005ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 100W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS P3 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

Infineon