Infineon IPA65R650CEXKSA1

Trans MOSFET N-CH 650V 10.1A 3-Pin(3+Tab) TO-220FP Tube, PG-TO220-3, RoHS

N-Channel 650 V 7 A 28 W 650 mOhm Through Hole Mosfet - PG-TO-220-3-FP

28W 20V 3.5V 23nC@ 10V 2N 650V 650m¦¸@ 10V 10.1A 440pF@ 100V TO-220F 10.5mm*4.7mm*15.99mm

650V 7A 28W 650m´Î@10V2.1A 3.5V@210Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

MOSFET, N-CH, 650V, 10.1A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.1A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3

CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV