Infineon BSZ060NE2LSATMA1

Name: Infineon BSZ060NE2LSATMA1
Brand: Infineon
SKU: BSZ060NE2LSATMA1

Power MOSFET, N Channel, 25 V, 40 A, 0.005 ohm, TSDSON, Surface Mount

$ 0.36

Production

Datasheet

Manufacturer Page

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor

SKU

Min

Pkg

Bulk Pricing

Newark

BSZ060NE2LSATMA1

10,543

Cut Tape

USD

USD

22h

Rochester Electronics

USD

14h

USD

BSZ060NE2LSATMA1CT-ND

94,320

Cut Tape

USD

3 month trend: -39.30%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSZ060NE2LSATMA1.

element14 APAC

Datasheet9 pages13 years ago

Upverter

Inventory History

3 month trend:

-39.30%

CAD Models

Download Infineon BSZ060NE2LSATMA1 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download
EE Concierge	SymbolFootprint
SnapEDA	SymbolFootprint	3D	Download
Ultra Librarian	SymbolFootprint		Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginAustria, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-03-18

Lifecycle StatusProduction (Last Updated: 4 months ago)

Related Parts

onsemiFDS6680A

N-Channel PowerTrench® MOSFET, Logic Level, 30V, 12.5A, 9.5mΩ

Details

onsemiFDMS7692A

FDMS7692A Series 30 V 13.5 A 8 mOhm SMT N-Ch PowerTrench Mosfet - Power56

Details

InfineonBSZ065N03LSATMA1

MOSFET N-CH 30V 12A TSDSON-8 / Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R

Details

InfineonIRF8714PBF

Single N-Channel 30 V 13 mOhm 12 nC HEXFET® Power Mosfet - SOIC-8

Details

InfineonIRFHM8334TRPBF

Single N-Channel 30 V 9 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

Details

onsemiFDS6670A

N-Channel PowerTrench® MOSFET, Logic Level, 30V, 13A, 8mΩ

Details

Descriptions

Descriptions of Infineon BSZ060NE2LSATMA1 provided by its distributors.

Power MOSFET, N Channel, 25 V, 40 A, 0.005 ohm, TSDSON, Surface Mount

Avnet

MOSFET Devices; INFINEON; BSZ060NE2LS; 25 V; 12 A; 20 V; 26 W

Maritex

Trans MOSFET N-CH 25V 12A 8-Pin TSDSON T/R

Avnet Japan

N-Channel MOSFET 40A 2.1W 20V 25V 6mΩ@10V 9.1nC 670pF@12V TSDSON-8 SMD, Adhesive Mount 3.3mm × 3.3mm × 1.1mm

UnikeyIC

12 A 25 V 0.0081 ohm N-CHANNEL Si POWER MOSFET

Component Stockers USA

MOSFET N-Ch 25V 40A TDSON-8 OptiMOS

Component Sense

Power Field-Effect Transistor, 12A I(D), 25V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

Infineon BSZ060NE2LSATMA1 MOSFET

RS APAC

25V 40A 5m´Î@10V20A 26W 2V@250uA 31pF@12V N Channel 670pF@12V 4.4nC@0~4.5V -55¡Í~+150¡Í@(Tj) PG-TSDSON-8 MOSFETs ROHS

Dasenic

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

Infineon

Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:26W; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon BSZ060NE2LSATMA1.

Newark