Infineon BSZ060NE2LSATMA1

Name: Infineon BSZ060NE2LSATMA1
Brand: Infineon
SKU: BSZ060NE2LSATMA1

Power MOSFET, N Channel, 25 V, 40 A, 0.005 ohm, TSDSON, Surface Mount

$ 0.261

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Distributor		SKU		Min	Pkg
Avnet		BSZ060NE2LSATMA1	42,000	5K						0.170	2d
Newark	2	BSZ060NE2LSATMA1	7,128	5	Cut Tape		0.587	0.434	0.334	0.334
Arrow Electronics	3	BSZ060NE2LSATMA1	14,268	1		0.722	0.499	0.374	0.261	0.200
Rutronik		TMOSP10544	95,000	5K						0.213	17h
Rochester Electronics		BSZ060NE2LSATMA1	5,000					0.245	0.203	0.181	9h

Inventory History

3 month trend: -5.55%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

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Newark

Datasheet9 pages13 years ago

Upverter

Inventory History

3 month trend:

-5.55%

CAD Models

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Supply Chain

Country of OriginAustria, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-03-18

Lifecycle StatusProduction (Last Updated: 4 weeks ago)

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Descriptions

Descriptions of Infineon BSZ060NE2LSATMA1 provided by its distributors.

Power MOSFET, N Channel, 25 V, 40 A, 0.005 ohm, TSDSON, Surface Mount

EBV Elektronik

MOSFET Devices; INFINEON; BSZ060NE2LS; 25 V; 12 A; 20 V; 26 W

Maritex

2.1W 20V 2V 9.1nC 1N 25V 6m¦¸@ 10V 40A 670pF@ 12V TSDSON-8 , 3.3mm*3.3mm*1.1mm

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Trans MOSFET N-CH 25V 12A 8-Pin TSDSON T/R

Avnet Japan

12 A 25 V 0.0081 ohm N-CHANNEL Si POWER MOSFET

Component Stockers USA

Power Field-Effect Transistor, 12A I(D), 25V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET N-Ch 12A 25V OptiMOS TSDSON8EP

RS APAC

25V 40A 5m´Î@10V20A 26W 2V@250uA 31pF@12V N Channel 670pF@12V 4.4nC@0~4.5V -55¡Í~+150¡Í@(Tj) PG-TSDSON-8 MOSFETs ROHS

Dasenic

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

Infineon

Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:26W; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon BSZ060NE2LSATMA1.

Newark